Keywords
current–voltage characteristic
illumination
mechanical deformation
photocurrent
Shockley model
carrier mobility
saturation current
semiconductor sensor
mathematical modeling.
How to Cite
Abstract
The influence of external physical factors on the electrical characteristics of semiconductor devices is an important problem in modern semiconductor physics, optoelectronics, sensor technology, and microelectronics. This study investigates the effects of illumination and mechanical deformation on the current–voltage (I–V) characteristics of a p–n junction diode using theoretical analysis and mathematical modeling. The physical mechanisms of carrier generation, recombination, drift and diffusion transport, deformation- induced modification of energy bands, carrier mobility, and saturation current are considered. Particular attention is given to the separate and combined effects of optical radiation and mechanical strain. A modified Shockley model incorporating deformation-dependent saturation current is developed. For small deformation, the saturation current is represented as a function of strain, while the photocurrent is considered dependent on light intensity, deformation, and time. On this basis, a generalized mathematical model of the form I = I(V, t, Φ, ε) is proposed. The model makes it possible to describe both static and dynamic changes in the current–voltage characteristics under simultaneous optical and mechanical influences. The theoretical analysis demonstrates that illumination primarily changes the photocurrent and shifts the I–References
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