Keywords
ion sochilishi
ion sochilish spektroskopiyasi
Ne⁺
Ar⁺
Xe⁺
energetik taqsimot
burchak taqsimoti
ko‘zgu sochilishi
fokuslash effekti
sirt atom qatori
yarim kanal
kristall sirt.
How to Cite
Abstract
Ushbu ishda InGaP(001) kristall sirtidan 5 keV boshlang‘ich energiyaga ega Ne⁺, Ar⁺ va Xe⁺ ionlarining sochilish jarayonlari tadqiq qilindi. Ionlarning energetik va burchak taqsimotlari sirtga tushish burchagining ψ = 30°, 70° va 110° qiymatlarida hamda InGaP(001)<110> va InGaP(001)<ī10> kristallografik yo‘nalishlari bo‘yicha tahlil qilindi. Energetik spektrlarda sirtning birinchi atom qatlamidagi indiy va galliy atomlariga, shuningdek, ikkinchi qatlamdagi fosfor atomlariga mos keluvchi cho‘qqilar aniqlandi. Sirt atom qatoriga tegishli energetik cho‘qqining kengligi uning tarkibida ikki xil atom — In va Ga mavjudligi bilan izohlanadi. Ion massasining ortishi va tushish burchagining o‘zgarishi energetik cho‘qqilar intensivligi hamda ularning burchak bo‘yicha taqsimotiga sezilarli ta’sir ko‘rsatishi aniqlandi. Xususan, katta massali Xe⁺ ionlari ayrim geometrik sharoitlarda sirt atom qatoridan sochilishda yuqori intensivlik namoyon qiladi. Burchak taqsimotlarida tushish tekisligi va ko‘zgu sochilish yo‘nalishlariga mos intensiv maksimumlar kuzatildi. Olingan natijalar ionlarning sirt atom qatorlari va yarim kanal devorlari bilan o‘zaro ta’siri, fokuslash hamda ko‘zgu sochilish effektlarini tavsiflash imkonini beradi.References
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