Abstract
Ushbu maqolada GaAs kristalidagi nuqtaviy defektlarning eksperimental kuzatilishi o‘rganilagan.Hususan,fizik xossalar nuqsonlar ta’sirida sezilarli o‘zgarishga uchragani sababli, nuqtaviy defektlarning tuzilishini o‘rganish maqsadida turli xil eksperimentlar tahlili ko‘rsatilgan
References
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3. Sugiura L., et al. “Dislocation motion in GaN light-emitting devices and its effect on device degradation”. Journal of Applied Physics, 81(4):1633–1639 (1997).

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