GAAS (GALLIY ARSENID) DA NUQTAVIY DEFEKTLARNING EKSPERIMENTAL KUZATILISHI
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Keywords

nuqtaviy defektlar, Xoll o‘lchovlari,fotolyuminisensiya,energiya darajalari, zichlik o‘lchovlari

How to Cite

GAAS (GALLIY ARSENID) DA NUQTAVIY DEFEKTLARNING EKSPERIMENTAL KUZATILISHI. (2026). Qo‘qon DPI. Ilmiy Xabarlar Jurnali, 8(3), 132-137. https://doi.org/10.70728/

Abstract

Ushbu maqolada GaAs kristalidagi nuqtaviy defektlarning eksperimental kuzatilishi o‘rganilagan.Hususan,fizik xossalar nuqsonlar ta’sirida sezilarli o‘zgarishga uchragani sababli, nuqtaviy defektlarning tuzilishini o‘rganish maqsadida turli xil eksperimentlar tahlili ko‘rsatilgan

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References

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2. Holt D.B, Yacobi B.G. “The Electrical, Optical and Device Effects of Dislocations and Grain Boundaries”. In: Extended Defects in Semiconductors. Electronic Properties, Device Effects and Structures, Cambridge University Press, pp. 412–605 (2007).

3. Sugiura L., et al. “Dislocation motion in GaN light-emitting devices and its effect on device degradation”. Journal of Applied Physics, 81(4):1633–1639 (1997).

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